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hexfet power mosfet notes through are on page 9 top view 8 12 3 4 5 6 7 d d d d g s a s s a so-8 absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead CCC 20 r ja junction-to-ambient CCC 50 c/w va w c max. 2419 190 20 30 -55 to + 150 2.5 0.02 1.6
v ds 30 v r ds(on) max (@v gs = 10v) 2.8 r ds(on) max (@v gs = 4.5v) 3.8 q g (typical) 44 nc i d (@t a = 25c) 24 a m features benefits industry-standard pinout so-8 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability form quantity tube/bulk 95 irf8788pbf-1 tape and reel 4000 IRF8788TRPBF-1 package type standard pack orderable part number irf8788pbf-1 so-8 base part number

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s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 CCC CCC v ? v dss / ? t j breakdown voltage temp. coefficient CCC 0.024 CCC v/c r ds(on) static drain-to-source on-resistance CCC 2.3 2.8 CCC 3.04 3.8 v gs(th) gate threshold voltage 1.35 1.80 2.35 v ? v gs(th) gate threshold voltage coefficient CCC -6.59 CCC mv/c i dss drain-to-source leakage current CCC CCC 1.0 CCC CCC 150 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 gfs forward transconductance 95 CCC CCC s q g total gate charge CCC 44 66 q gs1 pre-vth gate-to-source charge CCC 12 CCC q gs2 post-vth gate-to-source charge CCC 4.7 CCC q gd gate-to-drain charge CCC 14 CCC q godr gate charge overdrive CCC 13.3 CCC see figs. 17a & 17b q sw switch charge (q gs2 + q gd ) CCC 18.7 CCC q oss output charge CCC 22 CCC nc r g gate resistance CCC 0.54 1.09 t d(on) turn-on delay time CCC 23 CCC t r rise time CCC 24 CCC t d(off) turn-off delay time CCC 23 CCC t f fall time CCC 11 CCC c iss input capacitance CCC 5720 CCC c oss output capacitance CCC 980 CCC c rss reverse transfer capacitance CCC 450 CCC avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current CCC CCC (body diode) i sm pulsed source current CCC CCC (body diode) v sd diode forward voltage CCC CCC 1.0 v CCC CCC 0.75 v t rr reverse recovery time CCC 24 36 ns q rr reverse recovery charge CCC 33 50 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) m a 3.1 190 a CCC i d = 19a v gs = 0v v ds = 15v nc ns pf v gs = 4.5v, i d = 19a v gs = 4.5v typ. CCC v ds = v gs , i d = 100 a r g = 1.8 v ds = 15v, i d = 19a v ds = 24v, v gs = 0v, t j = 125c a na t j = 25c, i f = 19a, v dd = 15v di/dt = 230a/ s t j = 25c, i s = 19a, v gs = 0v showing the integral reverse p-n junction diode. t j = 25c, i s = 2.2a, v gs = 0v mosfet symbol v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 19a v ds = 15v v gs = 20v v gs = -20v v ds = 24v, v gs = 0v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 24a conditions see fig. 15a & 15b max. 230 19 ? = 1.0mhz downloaded from: http:///

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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 2 3 4 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 24a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.3v 60 s pulse width tj = 150c vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.0v 2.7v 2.5v bottom 2.3v 60 s pulse width tj = 25c 2.3v downloaded from: http:///

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fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 20 40 60 80 100 120 q g , total gate charge (nc) 0 4 8 12 16 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 19a 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100 sec 10msec 1msec downloaded from: http:///
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fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature fig 10. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.5 2.0 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a i d = 100 a 25 50 75 100 125 150 t a , ambient temperature (c) 0 4 8 12 16 20 24 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc ri (c/w) ? (sec) 0.0141064 0.000057 0.0210000 0.000286 0.2184000 0.000375 0.8204000 0.001902 4.7558194 0.004544 0.4648000 0.013931 28.9076170 0.038563 15.1191958 2.069546 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i ri ci= i / ri a 4 4 r 4 r 4 5 5 r 5 r 5 6 6 r 6 r 6 7 7 r 7 r 7 8 8 r 8 r 8 downloaded from: http:///
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fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 15b. switching time waveforms fig 15a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f $
1 0.1 % $ %& $ + - $ fig 14b. unclamped inductive waveforms t p v (br)dss i as fig 14a. unclamped inductive test circuit r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 2.0 4.0 6.0 8.0 10.0 v gs , gate-to-source voltage (v) 2 3 4 5 6 7 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) t j = 25c t j = 125c i d = 19a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 200 400 600 800 1000 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 6.4a 7.4a bottom 19a downloaded from: http:///
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fig 16.

for n-channel hexfet power mosfets ? ? ? ! p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period $ ("$
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* )++ + - + + + - - - $ ? "# $ % ? " ! & '('' ? $ )) ? '('' * " ( fig 17a. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 17b. gate charge waveform 1k vcc dut 0 l s 20k downloaded from: http:///
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so-8 package outline (mosfet & fetky) e1 de y b aa1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 b asic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 b as ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 8x 1.78 [ .070 ] 4 . ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012aa. not e s : 1. dimens ioning & t ole rancing pe r as me y14.5m-1994. 2. controlling dimension: millimeter 3. dimens ions are s hown in mil l imet e rs [inche s ]. 5 dimens ion doe s not incl ude mol d prot rus ions . 6 dimens ion doe s not incl ude mol d prot rus ions . mold prot rus ions not t o e xce e d 0.25 [.010]. 7 dimens ion is t he l engt h of l ead f or s ol de ring t o a s ubs t rat e. mold prot rus ions not t o e xce e d 0.15 [.006]. dimensions are shown in milimeters (inches) so-8 part marking information p = disgnates lead - free example: this is an irf7101 (mos fet ) f 7101 xxxx international logo rect ifier part number lot code product (optional) dat e code (yww) y = last digit of the year ww = we e k a = as s e mb l y s i t e cod e note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ downloaded from: http:///
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repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 1.25mh, r g = 25 , i as = 19a. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board. r is measured at t j of approximately 90c. 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel (dimensions are shown in milimeters (inches) note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level so-8 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ downloaded from: http:///

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